A 64-GHzfrand 3.6-V BVCE0Si Bipolar Transistor Using in situ Phosphorus-Doped and Large-Grained Polysilicon Emitter Contacts

IEEE Transactions on Electron Devices

Volumn 40, Issue 8, 1993, Pages 1563-1565

  Tanabe, M ^a   Kondo, M ^a   Nakamura, T ^a   Kobayashi, T ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC VARIABLES MEASUREMENT; PHOSPHORUS; SILICON;

CUT OFF FREQUENCY; HOMOJUNCTION SILICON TRANSISTORS; PHOSPHORUS DOPED POLYSILICON TECHNOLOGY; POLYSILICON EMITTER CONTACTS;

BIPOLAR TRANSISTORS;

EID: 0027649107     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.223725     Document Type: Article

References (12)

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