Simple expression for conversion gain of MESFET drain mixers

Electronics Letters

Volumn 29, Issue 17, 1993, Pages 1514-1516

  Cayrou, J C H ^a   Gayral, M ^a   Graffeuil, J ^a   Sautereau, J F ^a  

^a LAAS CNRS   (France)

Author keywords

Circuit design; Field effect transistors; Mixers

Indexed keywords

ELECTRIC IMPEDANCE; ELECTRIC NETWORK TOPOLOGY; ELECTRIC VARIABLES MEASUREMENT; EQUIVALENT CIRCUITS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); HARMONIC ANALYSIS; MIXER CIRCUITS; OSCILLATORS (ELECTRONIC); SEMICONDUCTOR DEVICE MODELS;

CONVERSION GAIN; DRAIN RESISTANCE; HARMONIC BALANCE SIMULATION; INTERMEDIATE FREQUENCY; LOCAL OSCILLATOR POWER; MESFET DRAIN MIXER; PULSE MEASUREMENT; STRAIGHTFORWARD ANALYTICAL EXPRESSION; TRANSCONDUCTANCE;

MESFET DEVICES;

EID: 0027647810     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19931009     Document Type: Article

References (2)

1. MAAS, S. A.: ‘Nonlinear microwave circuits’ (Artech House, 1988)
2. BEGEMANN, G., and JACOB, A.: ‘Conversion gain of MESFET drain mixers’, Electron. Lett., 1979,15, (18), pp. 567-568