Electromigration Reliability of Tungsten and Aluminum Vias and Improvements Under AC Current Stress

IEEE Transactions on Electron Devices

Volumn 40, Issue 8, 1993, Pages 1398-1405

  Young, K Konrad ^b   Cheung, Nathan W ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTRIC CURRENTS; TUNGSTEN;

ALUMINUM VIAS; ELECTROMIGRATION FAILURE; FLUX DIVERGENCE; TUNGSTEN VIAS; VACANCY RELAXATION MODEL;

ELECTRON DEVICES;

EID: 0027646077     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.223698     Document Type: Article

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