Low threshold injection laser in HgCdTe

Journal of Electronic Materials

Volumn 22, Issue 8, 1993, Pages 1061-1065

  Bouchut, Ph ^a   Destefanis, G ^a   Million, A ^a   Colin, T ^a   Bablet, J ^a  

^a CEA LETI   (France)

Author keywords

CdZnTe substrate; double heterostructures; HgCdTe; In doping; injection laser; MBE

Indexed keywords

FABRICATION; INJECTION LASERS; LASER DIODES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS;

COMPOUND SEMICONDUCTORS; DOUBLE HETEROSTRUCTURES; MERCURY CADMIUM TELLURIDE;

SEMICONDUCTOR LASERS;

EID: 0027643839     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02817525     Document Type: Article

References (12)

1. HgCdTe double heterostructure diode lasers grown by molecular-beam epitaxy
2. Room-temperature laser emission near 2 μm from an optically pumped HgCdTe separate-confinement heterostructure
3. Ion implanted junction formation in Hg1−xCdxTe
4. Interdiffusion and related defect mechanisms in the HgTe–CdTe system
5. Field and hot carrier enhanced leakage in InGaAsP/InP heterojunctions