Emission Characteristics of Silicon Vacuum Triodes with Four Different Gate Geometries

IEEE Transactions on Electron Devices

Volumn 40, Issue 8, 1993, Pages 1530-1536

  Busta, Heinz H ^a   Pogemiller, Jay E ^a   Zimmerman, Bruce J ^a  

^a BP EXPLORATION   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; SEMICONDUCTING SILICON; VACUUM TECHNOLOGY;

EMISSION CHARACTERISTICS; GATE GEOMETRIES; MONOCRYSTALLINE FIELD EMITTERS;

TRIODES;

EID: 0027643563     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.223715     Document Type: Article

References (10)

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