Electron inelastic mean free paths for plasmon excitations and interband transitions

Surface Science

Volumn 293, Issue 3, 1993, Pages 202-210

  Kwei, C M ^a   Chen, Y F ^a   Tung, C J ^b   Wang, J P ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIELECTRIC PROPERTIES; ELECTRIC EXCITATION; ELECTRON TRANSITIONS; ENERGY DISSIPATION; NUMERICAL ANALYSIS;

CRITICAL POINT ENERGY; DRUDE DIELECTRIC FUNCTION; ELECTRON INELASTIC MEAN TREE PATHS; ENERGY LOSS FUNCTION; INTERBAND TRANSITIONS; PLASMON EXCITATIONS; SUM RULES; VALENCE BANDS;

ELECTRONS;

EID: 0027642870     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(93)90314-A     Document Type: Article

References (54)

1. Excitations of Plasmons and Interband Transitions by Electrons
2. Optical Constants of Solids by Electron Spectroscopy
3. Electron excitation and the optical potential in electron microscopy
4. The inelastic mean free paths of electrons in semiconducting III-V compounds
5. Electron mean escape depths from x−ray photoelectron spectra of thermally oxidized silicon dioxide films on silicon
6. Determination of the electron escape depth in gold by means of ESCA
7. Escape Depths of X-ray Excited Electrons
8. Optical constants for thin films of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Ir, Os, Pt, and Au from 24 Å to 1216 Å