Arsenic Source and Drain Implant Induced Degradation of Short-Channel Effects in NMOSFETs

IEEE Electron Device Letters

Volumn 14, Issue 7, 1993, Pages 345-347

  Acovic, Alexandre ^a   Sadana, Devendra K ^a   Davari, Bijan ^a   Grutzmacher, Detlev ^a   Cardone, Frank ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; ION IMPLANTATION; MATHEMATICAL MODELS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

ARSENIC ION EFFECTS; CHANNEL LENGTH REDUCTION; DRAIN INDUCED BARRIER LOWERING (DIBL); MOSFET CHANNEL LENGTH; SHORT CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 0027629340     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.225568     Document Type: Article

References (12)

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