Effects of electron-beam-induced damage on leakage currents in back-gated GaAs/AlGaAs devices

Semiconductor Science and Technology

Volumn 8, Issue 7, 1993, Pages 1347-1351

  Das, B ^a   Subramaniam, S ^a   Melloch, M R ^b  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

BACKGATED DEVICES; ELECTRON BEAM ENERGY; ELECTRON BEAM INDUCED DAMAGE; THEORY OF GRUEN;

ELECTRON BEAMS; LEAKAGE CURRENTS; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

SEMICONDUCTOR DEVICES;

EID: 0027626596     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/8/7/025     Document Type: Article

References (19)

1. Split-gate electron waveguide fabrication using multilayer poly(methylmethacrylate)