A Study of Residual Stress Distribution Through the Thickness of p+ Silicon Films

IEEE Transactions on Electron Devices

Volumn 40, Issue 7, 1993, Pages 1245-1250

  Chu, Wen Hwa ^a   Mehregany, Mehran ^a  

^a CASE WESTERN RESERVE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; DIFFUSION; RESIDUAL STRESSES; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; THERMOOXIDATION;

ANISOTROPIC ETCHING; CANTILEVERS; SILICON FILMS;

SEMICONDUCTING SILICON;

EID: 0027624893     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.216428     Document Type: Article

References (14)

1. K.E. Petersen, “Silicon as a mechanical material,” Proc. IEEE, vol. 70, pp. 420–456, 1982.
2. X. Ding, “Mechanical properties of silicon films and capacitive microsensors,” Ph.D. dissertation, Case Western Reserve University, Cleveland, OH, May 1990.
3. X. Ding, W. Ko, and J.M. Mansour, “Residual stress and mechanical properties of boroNDoped p+ silicon films,” Sensors and Actuators, vol. A21-A23, pp. 866–871, 1990.
4. X. Ding, W. Ko, Y. Niu, and W. He, “A study on silicoNDiaphragm buckling,” in Tech. Dig., IEEE Solid State Sensors and Actuators Workshop (Hilton Head, SC), 1990, pp. 128–131.
5. X. Ding and W. Ko, “Buckling behavior of boroNDoped p+ silicon diaphragms,” in Tech. Dig., 6th Int. Conf. on Solid State Sensors and Actuators (San Francisco, CA), 1991, pp. 201–204.
6. M.A. Huff, S.D. Senturia, and R.T. Howe, “A thermally isolated microstructure suitable for gas sensing application,” in Tech. Dig., IEEE Solid State Sensors and Actuators Workshop (Hilton Head, SC), 1988, pp. 47–50.
7. F. Maseeh and S.D. Senturia, “Plastic Deformation of highly doped silicon,” Sensors and Actuators, vol. A21-A23, pp. 861–865, 1990.
8. W. Chu, M. Mehregany, X. Ning, and P. Pirouz, “Measurement of residual stress-induced bending moment of p+ silicon films,” Mat. Res. Soc. Symp. Proc, vol. 239, pp. 169–175, 1992.
9. W. Chu, M. Mehregany, D. Hansford, and P. Pirouz, “Effect of thermal oxidation on residual stress distribution through the thickness of p+ silicon films,” in Tech. Dig., IEEE Solid State Sensors and Actuators Workshop (Hilton Head, SC), June 22-25, 1992, pp. 90–93.
10. J.M. Gere and S.P. Timoshenko, Mechanics of Materials, 3rd ed. Boston, MA: PWS-KENT, 1990.
11. S.P. Timoshenko, Theory of Plates and Shells, 1st ed. New York: McGraw-Hill, 1940, pp. 41–45.
12. R.J. Jaccodine and W.A. Schlegel, “Measurements of strains of Si-SiO2 interface,” J. Appl. Phys., vol. 37, pp. 2429–2434, 1966.
13. J.M. Gere and S.P. Timoshenko, Mechanics of Materials, 3rd ed. Boston, MA: PWS-KENT, 1990, pp. 301–308.
14. M. Mehregany, “Application of micromachined structures to the study of mechanical properties and adhesion of thin films,” M.S. thesis, Massachusetts Institute of Technology, Cambridge, MA, May 1986.