Strained-InGaAsP MQW electroabsorption modulator integrated DFB laser

Electronics Letters

Volumn 29, Issue 12, 1993, Pages 1087-1089

  Sato, K ^a   Kotaka, I ^a   Wakita, K ^a   Kondo, Y ^a   Yamamoto, M ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Epitaxy and epitaxial growth; Integrated optoelectronics; Lasers; Optical modulation

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; GAIN CONTROL; INTEGRATED OPTOELECTRONICS; MONOLITHIC INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

ELECTROABSORPTION MODULATOR; MULTIQUANTUM WELL (MQW);

LIGHT MODULATORS;

EID: 0027615004     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19930726     Document Type: Article

References (11)

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