Effect of polysilicon depletion on MOSFET I-V characteristics

Electronics Letters

Volumn 29, Issue 13, 1993, Pages 1208-1209

  Huang, C L ^a   Arora, N D ^a   Nasr, A I ^a   Bell, D A ^a  

^a HEWLETT PACKARD COMPANY   (United States)

Author keywords

Field effect transistors; Semiconductor devices and materials

Indexed keywords

ELECTRIC PROPERTIES; GATES (TRANSISTOR); MATHEMATICAL MODELS; OXIDES; SEMICONDUCTING POLYMERS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

MODIFIED PAO-SAH MODEL; POLYSILICON DEPLETION EFFECTS;

MOSFET DEVICES;

EID: 0027614445     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19930807     Document Type: Article

References (5)

1. WONG, C. Y., SUN, J.Y.-C., TAUR, Y., OH, C. S., ANGELUCC1, R., and DAVARI, B.: ‘Doping of N+ and P+ polysilicon in a dual-gate CMOS process’. IEDM Tech. Dig., 1988, p. 238
2. LU, C.-Y., SUNG, J. M., KIRSCH, H. C., HIL.LENIUS, S. J., SMITH, T. E., and MANCHANDA, L.: ‘Anomalous C-V characteristics of implanted poly MOS structure in n+/p+ dual-gate CMOS technology’, IEEE Electron Device Lett., 1989,10, p. 192
3. HABAS, P., and SELBERHERR, S.: ‘On the effect of non-degenerate doping of polysilicon gate in the oxide MOS-devices'analytical modeling’, Solid-State Electron., 1990, 33, p. 1539
4. TERADA, K., and MUTA, H.: ‘A new method to determine effective MOSFET channel length’, Jpn. J. Appl. Phys., 1979,18, p. 953
5. HUANG, C.-L., FARICELLI, J., and ARORA, N. D.: ‘A new technique for measuring MOSFET inversion layer mobility’, to be published in IEEE Trans. Electron Devices