Failure Analysis of Power Modules: A Look at the Packaging and Reliability of Large IGBT's

IEEE Transactions on Components, Hybrids, and Manufacturing Technology

Volumn 16, Issue 4, 1993, Pages 412-417

  de Lambilly, Herve ^a   Keser, Helmut O ^a  

^a Corporate Research Center ASEA BROWN BOVERI ^*  (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRONIC EQUIPMENT TESTING; FAILURE ANALYSIS; GATES (TRANSISTOR); MICROPROCESSOR CHIPS; MOS DEVICES; THERMAL EFFECTS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBTS); PARALLELED CHIPS; POWER CYCLING TESTS; POWER MODULES;

ELECTRONICS PACKAGING;

EID: 0027612158     PISSN: 01486411     EISSN: None     Source Type: Journal    
DOI: 10.1109/33.237930     Document Type: Article

References (13)

1. “Starke Typen, IGBT und Leistungsmodule dringen vermehrt in die Elekronik,” Elektronik Praxis, vol. 6, pp. 29–33, 1990.
2. A. Petterteig and T. Rogne, “IGBT turn off losses—In hard switching and with capacitive snubber,” in Proc. of EPE-MADEP Conf., 1991, pp. 0–203, 0–208.
3. L. Lorenz, H. Tietge, and M. Feldvoss, “The dynamic behavior and SOA diagram of a fast switching IGBT,” in Actuator 90, Proc. 2nd Int. Technology-Transfer Congress, 1990, pp. 103–107.
4. A. Marmann, “Reliability of silicon power transistors,” in Microelectronics and Reliability. New York: Pergamon, 1976, vol. 15, pp. 69–74.
5. J. F. Burgess, R. O. Carlson, H. H. Glascock, C. A. Neugebauer, and H. F. Webster, “Solder fatigue problems in power packages,” IEEE Trans. Comp., Hybrids Manuf. Technol., vol. 7, pp. 405–410, 1984.
6. S. K. Kang, N. D. Zommer, D. L. Feucht, and R. W. Heckel, “Thermal fatigue failure of soft soldered contacts to silicon power transistors,” IEEE Trans. Parts, Hybrids Packag. Technol., vol. PHP-13, pp. 318–321, 1977.
7. K. H. Augustin, “Trägerkorper zur elektrish isolierten Anordnung von Bauteilen” German Patent GE 3941814 Al, June 20, 1991.
8. A. J. Yerman, F. G. Hudda, and D. S. Zak, “A comparison of two methods of measuring thermal resistance of IGT's,” in Fifth Int. Proc. Electronics Packaging Conf., 1985, pp. 202–211.
9. B.J. Shanker and R.T. Lambertson, “Sources of error in package thermal measurement,” IEEE Parts, Hybrids, Pack. Technol., vol. PHP-13, pp. 318–321, 1977.
10. J. Pautrieux, C. Schaeffer, and J. P. Ferrieux, “Electrical and thermal investigation on IGBT,” in Proc. PCIM '92 Conf., 1992, pp. 69, 158.
11. R. Bayerer and T. Schneider, “Temperature dependant parameters of power semiconductors and their impact on paralleling,” in Proc. PCIM '91 Conf., 1991, paper PC4.3.
12. C.A. Neugebauer, A.F. Yerman, R. O. Carlson, J. F. Burgess, H.F. Webster, and H.H. Glascock, The Packaging of Power Semiconductor Devices. New York: Gordon and Breach, 1986, ch. 7, 8, pp. 37–57.
13. D. Pote, G. Thomas, and T. Guthrie, “An overview of infrared thermal imaging techniques in the reliability and failure of power transistors,” in Proc. Int. Symp. for Testing and Failure Analysis, 1988, pp. 63–65.