Effects of Space Radiation Damage and Temperature on the Noise in CCDs and LDD MOS Transistors

IEEE Transactions on Nuclear Science

Volumn 40, Issue 3, 1993, Pages 288-294

  Murowinski, R G ^a   Linzhuang, Gao ^b   Deen, M J ^c  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b CHINESE ACADEMY OF SCIENCES   (China)

^c SIMON FRASER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

MOS DEVICES; RADIATION DAMAGE; SPURIOUS SIGNAL NOISE; TRANSISTORS;

DUAL CORRELATED SAMPLE TIME CONSTANT; LDD MOS TRANSISTORS; NOISE SPECTRAL DENSITY; SPACE RADIATION DAMAGE;

CHARGE COUPLED DEVICES;

EID: 0027611896     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.221053     Document Type: Article

References (18)

1. John Hutchings, DAO, private communication.
2. M. J. Deen, “Low frequency noise as a characterization tool in InP and GaAs-based double barrier resonant tunneling diodes,” 1st Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, Lyon, France, 19–22 May, 1992.
3. J. R. Janesick, T. Elliot, M. M. Blouke, and J. Freeman, “Scientific charge-coupled devices,” Optical Eng., vol. 26, p. 92, 1987.
4. H. Kim, M. M. Blouke, and D. L. Heidtmann, “Effects of transistor geometry on CCD output sensitivity,” SPIE, vol. 1242, p. 195, 1990.
5. Dick Greenwall, ST1S Blades Committee Review, CCD Subsystem, September 24 and 25, 1991.
6. E. G. Stassinopoulos and J. M. Barth, “FUSE Elliptical Orbit Radiation Environment,” NASA/Goddard publication X-900-91-09.
7. S. Friedman, Johns Hopkins University, private communication.
8. J. Ziegler, J. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, Pergamon Press, 1985.
9. J. Janesick, G. Soli, T. Ellot and S. Collins, “The effects of proton damage on charge-coupled devices,” SPIE, vol. 1147, 1991.
10. The MathWorks, Inc., PC-MATLAB User’s Guide, Cochituate Place, 24 Prime Way Park, Natick, MA, Oct. 1990.
11. Aldert van der Ziel, Noise in Solid State Devices and Circuits, New York: Wiley, pp. 124–126, 1986.
12. M. J. Deen and Z. X. Yan, “A new method of measuring the threshold voltage for small geometry MOSFETs from subthreshold conduction,” Solid-State Electronics, vol. 33(5), pp. 503–512, May 1990.
13. Z. X. Yan and M. J. Deen, “A physically-based method for measuring the threshold voltage of MOSFETs,” IEE Proceedings ~ G Circuits, Devices and Systems, vol. 138(3), pp. 351–357, June, 1991.
14. S. Christensson, I. Lundstrom, and C. Svensson, “Low frequency noise in MOS transistors—I,” Solid-State Electronics, vol. 11, p. 797, 1968.
15. H. S. Fu and C. T. Sah, “Theory and experiment on surface 1/f noise,” IEEE Trans. Electron Devices, vol. ED-19, p. 273, 1972.
16. T. L. Meisenheimer and D. M. Fleetwood, “Effect of radiation-induced charge on 1/f noise in MOS devices,” IEEE Trans. Nuc. Sci., vol. 37, p. 1696, 1990.
17. A. van der Ziel, “Unified presentation of 1/f noise in electronic devices: Fundamental 1/f noise Sources,” Proc. IEEE, vol. 76, p. 233, 1988.
18. H. Kim, “Characteristics of 1/f noise of the buried-channel charge-coupled device (CCD),” SPIE, vol. 1071, Optical Sensors Elect. Photo., p. 66, 1989.