Thickness dependence of electrical resistivity and activation energy in AgSbTe2 thin films

Journal of Materials Science: Materials in Electronics

Volumn 4, Issue 2, 1993, Pages 183-186

  Lakshminarayana, D ^a   Desai, R R ^a  

^a SARDAR PATEL UNIVERSITY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CONDUCTIVITY; EVAPORATION; SEMICONDUCTING SILVER COMPOUNDS; SUBSTRATES; THIN FILMS;

ACTIVATION ENERGY; FILM THICKNESS; GLASS SUBSTRATES; SILVER ANTIMONY TELLURIDE; THERMAL EVAPORATION; THICKNESS DEPENDENCE;

SEMICONDUCTING FILMS;

EID: 0027611107     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/BF00180471     Document Type: Article

References (20)

1. Electrical conductivity of air-exposed and unexposed lead telluride thin films-temperature and size effects
2. Semiconducting behavior of Ag2Te thin films and the dependence of band gap on thickness