Non-destructive characterization of HgCdTe using photoinduced microwave reflection

Semiconductor Science and Technology

Volumn 8, Issue 6S, 1993, Pages 936-940

  Spada, E J ^a   Rao, V R ^a   Bhat, I ^a   Borrego, J M ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHARGE CARRIERS; EPITAXIAL GROWTH; MICROWAVES; NONDESTRUCTIVE EXAMINATION; REFLECTION; SEMICONDUCTING TELLURIUM COMPOUNDS; SURFACE PHENOMENA;

PHOTOINDUCED MICROWAVE REFLECTION; SEMICONDUCTING MERCURY CADMIUM TELLURIDE; SURFACE RECOMBINATION VELOCITY;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0027610098     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/8/6S/014     Document Type: Article

References (6)

1. Highly uniform, large-area HgCdTe layers on CdTe and CdTeSe substrates