Surface Potential at Threshold in Thin-Film SOI MOSFET's

IEEE Transactions on Electron Devices

Volumn 40, Issue 6, 1993, Pages 1129-1133

  Mazhari, Baquer ^a   Ioannou, Dimitris E ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b GEORGE MASON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SILICON ON INSULATOR TECHNOLOGY; THIN FILM DEVICES;

DEVICE DIMENSIONS; FILM DOPING LEVEL; FULLY DEPLETED SOI MOSFETS; ONE-DIMENSIONAL NUMERICAL SIMULATION; SURFACE POTENTIAL; THIN FILM SOI MOSFETS; THRESHOLD;

MOSFET DEVICES;

EID: 0027608848     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.214739     Document Type: Article

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