Computation of drain and substrate currents in ultra-short-channel nMOSFET's using the hydrodynamic model

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 12, Issue 6, 1993, Pages 817-824

  Rahmat, Khalid ^a   White, Jacob ^a   Antoniadis, Dimitri A ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENT MEASUREMENT; GATES (TRANSISTOR); MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS; STATISTICAL METHODS; SUBSTRATES; THERMAL CONDUCTIVITY;

DRAIN CURRENTS; ENERGY BALANCE EQUATION; ENERGY DISTRIBUTION FUNCTIONS; HYDRODYNAMIC MODELS; SUBSTRATE CURRENTS; ULTRA SHORT CHANNEL NMOSFETS;

MOSFET DEVICES;

EID: 0027608161     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/43.229756     Document Type: Article

References (15)

1. M. Rudan F. Odeh Multi-dimensional discretization scheme for the hydrodynamic model of semiconductor devices COMPEL 5 149 183 1986
2. A. Forghieri R. Guerrieri P. Ciampolini A. Gnudi M. Rudan G. Baccarani A new discretization strategy of the semiconductor equations comprising momentum and energy balance IEEE Trans. Computer-Aided Design CAD-7 231 242 1988
3. A. Gnudi F. Odeh Engineering and numerics of the hydrodynamic model SIAM Meeting SIAM Meeting Chicago 1990-July
4. K. Rahmat J. White D. A. Antoniadis Computation of drain and substrate currents in ultra-short-channel NMOSFET's using the hydrodynamic model IEDM Tech. Digest 115 118 IEDM Tech. Digest 1991
5. G. Baccarani M. R. Wordeman An investigation of steady-state velocity overshoot effects in Si and GaAs devices Solid State Electron. 28 407 416 1985
6. B. Meinerzhagen W. L. Engl The influence of the thermal equilibrium approximation on the accuracy of classical two-dimensional numerical modeling of silicon submicrometer MOS transistors IEEE Trans. Electron Devices ED-35 689 697 1988
7. T. W. Tang Extension of the Scharfetter-Gummel algorithm to the energy balance equation IEEE Trans. Electron Devices ED-31 1912 1914 1984
8. G. G. Shahidi D. A. Antoniadis Η. I. Smith Reduction of channel hot-electron-generated substrate current in sub-150-nm channel length Si MOSFET's IEEE Electron Device Lett. 9 497 499 1988
9. G. A. Sai-Halasz M. R. Wordeman D. P. Kern S. Rishton E. Ganin High transconductance and velocity overshoot in NMOS devices at the O.1-μm gate-length level IEEE Electron Device Lett. 9 464 466 1988
10. J. M. Higman K. Hess C. G. Hwang R. W. Dutton Coupled Monte-Carlo drift diffusion analysis of hot-electron effects in MOS-FETS IEEE Trans. Electron Devices ED-36 930 937 1989
11. D. Cassi Β. Riccò An analytical model of the energy distribution of hot electrons IEEE Trans. Electron Devices ED-37 1514 1521 1990
12. N. Goldsman L. Hendrickson J. Frey Reconciliation of a hot-electron distribution function with the lucky electron-exponential model in silicon IEEE Electron Device Lett. 11 472 474 1990
13. J. W. Slotboom G. Streutker G. J. T. Davids P. B. Hartog Surface impact ionization in silicon devices IEDM Tech. Digest 494 497 IEDM Tech. Digest 1987
14. J. Jacobs S. M Modeling the effects of Si/SiO interface proximity and transverse field on carrier mobility in MOSFET's 1987 MA, Cambridge
15. S. Selberherr Analysis and Simulation of Semiconductor Devices 1984 Springer-Verlag Vienna