Transformation of a Si(111) stepped surface during the formation of a Si(3 × 1)Ca superstructure

Surface Science

Volumn 290, Issue 3, 1993, Pages 232-238

  Krasilnikov, A B ^a   Latyshev, A V ^a   Aseev, A L ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ATOMS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; DIFFUSION; EPITAXIAL GROWTH; MICROSCOPIC EXAMINATION; MORPHOLOGY; PHASE TRANSITIONS; SURFACES;

ADATOM ELECTROMIGRATION; CALCIUM FLUORIDES; MONOATOMIC STEP CLUSTERING; SILICON CALCIUM SUPERSTRUCTURES; SILICON(111) STEPPED SURFACES; SURFACE RECONSTRUCTION; ULTRAHIGH VACUUM REFLECTION ELECTRON MICROSCOPY;

SILICON;

EID: 0027608051     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(93)90706-P     Document Type: Article

References (10)

1. Initial epitaxial growth of copper silicide on Si{111} studied by low-energy electron microscopy and photoemission electron microscopy
2. Proc. Microsc. Semicond. Mater. Conf.
3. Initial formation of the interface between a polar insulator and a nonpolar semiconductor: CaF2 on Si(111)