Numerical Simulation of the Current-Voltage Characteristics of Heteroepitaxial Schottky-Barrier Diodes

IEEE Transactions on Electron Devices

Volumn 40, Issue 6, 1993, Pages 1038-1046

  Bhapkar, Udayan V ^a   Mattauch, Robert J ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENT MEASUREMENT; ELECTRONIC PROPERTIES; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; VOLTAGE MEASUREMENT;

CURRENT-VOLTAGE CHARACTERISTICS; DRIFTED-MAXWELLIAN DISTRIBUTION; ELECTRON ENERGY DISTRIBUTION; HETEROEPITAXIAL SCHOTTKY BARRIER DIODES; QUANTUM-MECHANICAL TUNNELING;

SCHOTTKY BARRIER DIODES;

EID: 0027607212     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.214726     Document Type: Article

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