메뉴 건너뛰기




Volumn 28, Issue 6, 1993, Pages 671-677

A Temperature-Stabilized SOI Voltage Reference Based on Threshold Voltage Difference Between Enhancement and Depletion NMOSFET's

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; VOLTAGE CONTROL; VOLTAGE MEASUREMENT;

EID: 0027607209     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.217982     Document Type: Article
Times cited : (29)

References (20)
  • 1
    • 0022717664 scopus 로고
    • High speed, low power, implanted-buried-oxide CMOS circuits
    • J. P. Colinge et al., “High speed, low power, implanted-buried-oxide CMOS circuits,” IEEE Electron Device Lett., vol. EDL-7, pp. 279–281, 1986.
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , pp. 279-281
    • Colinge, J.P.1
  • 2
    • 0023541365 scopus 로고
    • High performance SOI MOSFET using ultra-thin SOI film
    • M. Yoshimi, T. Wada, K. Kato, and H. Tango, “High performance SOI MOSFET using ultra-thin SOI film,” in IEDM Tech. Dig., 1987, pp. 640–643.
    • (1987) IEDM Tech. Dig. , pp. 640-643
    • Yoshimi, M.1    Wada, T.2    Kato, K.3    Tango, H.4
  • 3
    • 0022700996 scopus 로고
    • Subthreshold slope of thin-film SOI MOSFET's
    • J. P. Colinge, “Subthreshold slope of thin-film SOI MOSFET's,” IEEE Electron Device Lett., vol. EDL-7, pp. 244–246, 1986.
    • (1986) IEEE Electron Device Lett. , vol.EDL-7 , pp. 244-246
    • Colinge, J.P.1
  • 4
    • 0024629437 scopus 로고
    • Two-dimensional simulation and measurement of high-performance MOSFET's made on a very thin SOI film
    • Mar.
    • M. Yoshimi et al., “Two-dimensional simulation and measurement of high-performance MOSFET's made on a very thin SOI film,” IEEE Trans. Electron Devices, vol. 36, pp. 493–503, Mar. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 493-503
    • Yoshimi, M.1
  • 6
    • 21644467151 scopus 로고
    • A low-voltage CMOS bandgap reference
    • June
    • E. A. Vittoz and O. Neyroud, “A low-voltage CMOS bandgap reference,” IEEE J. Solid-State Circuits, vol. SC-14, pp. 573–577, June, 1979.
    • (1979) IEEE J. Solid-State Circuits , vol.SC-14 , pp. 573-577
    • Vittoz, E.A.1    Neyroud, O.2
  • 7
    • 77949598388 scopus 로고
    • A precision curvature-corrected CMOS bandgap reference
    • (New York) Feb.
    • B. S. Song and P. R. Gray, “A precision curvature-corrected CMOS bandgap reference,” in ISSCC Dig. Tech. Papers (New York), Feb. 1983.
    • (1983) ISSCC Dig. Tech. Papers
    • Song, B.S.1    Gray, P.R.2
  • 8
    • 0003694733 scopus 로고
    • Analog Integrated Circuits
    • 2nd ed. New York
    • P. R. Gray and R. G. Meyer, Analog Integrated Circuits, 2nd ed. New York: 1984, 284–286.
    • (1984) , pp. 284-286
    • Gray, P.R.1    Meyer, R.G.2
  • 10
    • 0020830319 scopus 로고
    • Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET's
    • Dec.
    • H. K. Lim and J. G. Possum, “Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET's,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1244–1251, Dec. 1983.
    • (1983) IEEE Trans. Electron Devices , vol.ED-30 , pp. 1244-1251
    • Lim, H.K.1    Possum, J.G.2
  • 11
    • 0026388474 scopus 로고
    • A self-consistent analytic threshold voltage model for thin SOI n-channel MOSFET's
    • Dec.
    • J. H. Choi, H. J. Song, K. D. Suh, J. W. Park, and C. K. Kim, “A self-consistent analytic threshold voltage model for thin SOI n-channel MOSFET's,” Solid-State Electron., vol. 34, pp. 1421–1425, Dec. 1991.
    • (1991) Solid-State Electron. , vol.34 , pp. 1421-1425
    • Choi, J.H.1    Song, H.J.2    Suh, K.D.3    Park, J.W.4    Kim, C.K.5
  • 12
    • 0024738067 scopus 로고
    • Design considerations of thin-film SOI/CMOS device structures
    • Sept.
    • T. Aoki, M. Tomizawa, and A. Yoshimi, “Design considerations of thin-film SOI/CMOS device structures,” IEEE Trans. Electron Devices, vol. 36, pp. 1725–1730, Sept. 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 1725-1730
    • Aoki, T.1    Tomizawa, M.2    Yoshimi, A.3
  • 13
    • 0025418367 scopus 로고
    • Performance and physical mechanism in SIMOX MOS transistors operated at very low temperature
    • Apr.
    • T. Elewa et al., “Performance and physical mechanism in SIMOX MOS transistors operated at very low temperature,” IEEE Trans. Electron Devices, vol. 37, pp. 1007–1019, Apr. 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 1007-1019
    • Elewa, T.1
  • 15
    • 0003805738 scopus 로고
    • Device Electronics for Integrated Circuits
    • 2nd ed. New York Wiley
    • R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 2nd ed. New York: Wiley, 1986, p. 56.
    • (1986) , pp. 56
    • Muller, R.S.1    Kamins, T.I.2
  • 16
    • 0015015144 scopus 로고
    • New developments in IC voltage regulators
    • Feb.
    • R. J. Widler, “New developments in IC voltage regulators,” IEEE J. Solid-State Circuits, vol. SC-6, pp. 2–7, Feb. 1971.
    • (1971) IEEE J. Solid-State Circuits , vol.SC-6 , pp. 2-7
    • Widler, R.J.1
  • 17
    • 0016328924 scopus 로고
    • A simple three-terminal IC bandgap reference
    • Dec.
    • A. P. Brokaw, “A simple three-terminal IC bandgap reference,” IEEE J. Solid-State Circuits, vol. SC-9, pp. 388–393, Dec. 1974.
    • (1974) IEEE J. Solid-State Circuits , vol.SC-9 , pp. 388-393
    • Brokaw, A.P.1
  • 18
    • 84944996973 scopus 로고
    • Huggins (1st commercial use of ΔVT reference).
    • Huggins et al., in ISSCC Dig., 1978 (1st commercial use of ΔVT reference).
    • (1978) ISSCC Dig.
  • 19
    • 21244498437 scopus 로고
    • Temperature dependence of n-type MOS transistors
    • F. R. Heiman and H. S. Miller, “Temperature dependence of n-type MOS transistors,” IEEE Trans. Electron Devices, vol. ED-12, pp. 142–148, 1964.
    • (1964) IEEE Trans. Electron Devices , vol.ED-12 , pp. 142-148
    • Heiman, F.R.1    Miller, H.S.2
  • 20
    • 0024170861 scopus 로고
    • Demonstration of the benefits of SOI for high temperature operation
    • SOS/SOI Technology Workshop (St. Simons Island, GA)
    • W. A. Krull and J. F. Lee, “Demonstration of the benefits of SOI for high temperature operation,” in Proc. IEEE SOS/SOI Technology Workshop (St. Simons Island, GA), 1988, p. 69.
    • (1988) Proc. IEEE. , pp. 69
    • Krull, W.A.1    Lee, J.F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.