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Volumn 29, Issue 10, 1993, Pages 830-832

Electrically injected visible (639-661 nm) vertical cavity surface emitting lasers

Author keywords

Lasers; Semiconductor lasers

Indexed keywords

LASER PULSES; LASER RESONATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0027596978     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19930555     Document Type: Article
Times cited : (34)

References (7)
  • 1
    • 84910949736 scopus 로고    scopus 로고
    • Special issue on semiconductor lasers
    • Special issue on semiconductor lasers, IEEE J. Quantum Electron., 27, (6), pp. 1332-1425
    • IEEE J. Quantum Electron. , vol.27 , Issue.6 , pp. 1332-1425
  • 2
    • 0026943954 scopus 로고
    • Short wavelength (699 nm) electrically pumped vertical-cavity surface-emitting lasers
    • TELL, B., LEIBENGUTH, R. E., BROWN-GOEBELER, K. F., and LIVESCU, G.: ‘Short wavelength (699 nm) electrically pumped vertical-cavity surface-emitting lasers’, IEEE Photonics Technol. Lett., 1992, 4, (11), pp. 1195-1196
    • (1992) IEEE Photonics Technol. Lett. , vol.4 , Issue.11 , pp. 1195-1196
    • TELL, B.1    LEIBENGUTH, R.E.2    BROWN-GOEBELER, K.F.3    LIVESCU, G.4
  • 3
    • 0000743035 scopus 로고
    • JUN., BRYAN, R. P., LOTT, J. A., and OLBRIGHT, G. R.: ‘Visible (657 nm) InGaP/InAlGaP strained quantum well verticalcavity surface-emitting laser
    • SCHNEIDER, R. P., JUN., BRYAN, R. P., LOTT, J. A., and OLBRIGHT, G. R.: ‘Visible (657 nm) InGaP/InAlGaP strained quantum well verticalcavity surface-emitting laser’, Appl. Phys. Lett., 1992, 60, (15), pp. 1830-1832
    • (1992) Appl. Phys. Lett. , vol.60 , Issue.15 , pp. 1830-1832
    • SCHNEIDER, R.P.1
  • 4
    • 85024225694 scopus 로고
    • JUN., and MALLOY, K. J.: ‘All InAlGaP visible (672 nm) vertical cavity surface emitting laser
    • 2nd-7th May Baltimore, MD, Paper CWJ56
    • LOTT, J. A., SCHNEIDER, R. P., JUN., and MALLOY, K. J.: ‘All InAlGaP visible (672 nm) vertical cavity surface emitting laser’. Conf. Lasers and Electro-Optics (CLEO), 2nd-7th May 1993, Baltimore, MD, Paper CWJ56
    • (1993) Conf. Lasers and Electro-Optics (CLEO)
    • LOTT, J.A.1    SCHNEIDER, R.P.2
  • 5
    • 0004414488 scopus 로고
    • Photoluminescence linewidths in MOVPE-grown ordered and disordered InAlGaP alloys
    • SCHNEIDER, R. P., JUN., JONES, E. D., LOTT, J. A., and BRYAN, R. P.: ‘Photoluminescence linewidths in MOVPE-grown ordered and disordered InAlGaP alloys’, J. Appl. Phys., 1992, 72, (11), pp. 5397-5400
    • (1992) J. Appl. Phys. , vol.72 , Issue.11 , pp. 5397-5400
    • SCHNEIDER, R.1    JUN, P.2    JONES, E.D.3    LOTT, J.A.4    BRYAN, R.P.5
  • 6
    • 0027550148 scopus 로고
    • JUN., VAWTER, G. A., ZOLPER, J. C., and MALLOY, K. J.: ‘Visible (660nm) resonant cavity light-emitting diodes
    • LOTT, J. A., SCHNEIDER, R. P., JUN., VAWTER, G. A., ZOLPER, J. C., and MALLOY, K. J.: ‘Visible (660nm) resonant cavity light-emitting diodes’, Electron. Lett., 1993, 29, (4), pp. 328-329
    • (1993) Electron. Lett. , vol.29 , Issue.4 , pp. 328-329
    • LOTT, J.A.1    SCHNEIDER, R.P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.