Growth and characterization of CdS epilayers on (100)GaAs by atomic layer epitaxy

Journal of Crystal Growth

Volumn 130, Issue 1-2, 1993, Pages 29-36

  Tadokoro, Toyoyasu ^a   Ohta, Shin ichi ^b   Ishiguro, Takashi ^a   Ichinose, Yukio ^a   Kobayashi, Satoshi ^c   Yamamoto, Naoki ^d  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^b Nippon Seiki Co Ltd   (Japan)

^c NIIGATA UNIVERSITY   (Japan)

^d TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOCONDUCTING MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SPECTRUM ANALYSIS; SURFACE PROPERTIES; THICKNESS MEASUREMENT;

ATOMIC LAYER EPITAXY; CADMIUM SULFIDE; ZINCBLENDE STRUCTURE;

SEMICONDUCTOR GROWTH;

EID: 0027594789     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(93)90832-H     Document Type: Article

References (30)

1. II–VI compound thin films for windows in heterojunction solar cells
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4. Properties of CdS-ZnS superlattices prepared by hot wall epitaxy
5. Structural and Photoluminescence Characterization of CdS/GaAs Films and CdS-ZnS Strained-Layer Superlattices Grown by Low-Pressure MOCVD Method
6. Substrate temperature effect on crystallographic quality and surface morphology of zinc sulfide films on (100)-oriented silicon substrates by molecular-beam epitaxy