Heteroepitaxial growth of c-axis-oriented batio3 thin films with an atomically smooth surface

Japanese Journal of Applied Physics

Volumn 32, Issue 5 A, 1993, Pages L687-L689

  Gong, Jianping ^a   Kawasaki, Masashi ^a,b   Fujito, Kenji ^a   Tanaka, Udai ^a   Ishizawa, Nobuo ^a   Yoshimoto, Mamoru ^a   Koinuma, Hideomi ^a   Kumagai, Masao ^c   Hirai, Kiyoto ^c   Horiguchi, Kenichi ^c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c Kanagawa High Technology Foundation   (Japan)

Author keywords

AFM; Atomically smooth surface; BaTiO3 pulsed laser deposition; Heteroepitaxy; Insulating layer; RBS; SIS tunnel junction

Indexed keywords

CRYSTAL STRUCTURE; EPITAXIAL GROWTH; LASER PULSES; THIN FILMS; X RAY ANALYSIS;

ATOMICALLY SMOOTH SURFACES; HETEROEPITAXY; RUTHERFORD BACKSCATTERING SPECTROMETRY;

BARIUM TITANATE;

EID: 0027594775     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.L687     Document Type: Article

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