On the electrical conduction in the interpolysilicon dielectric layers

IEEE Electron Device Letters

Volumn 14, Issue 5, 1993, Pages 213-215

  Cobianu, Cornel ^a   Popa, Ovidiu ^a   Dascalu, Dan ^a  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; OXIDES; ROM; SEMICONDUCTING SILICON COMPOUNDS;

EEPROM DEVICES; ELECTRICAL CONDUCTION; HIGH-TEMPERATURE OXIDE (HTO); INTERPOLYSILICON DIELECTRIC LAYERS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); POLYCRYSTALLINE SILICON;

DIELECTRIC MATERIALS;

EID: 0027593926     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.215171     Document Type: Article

References (6)

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2. L. Faraone G. Harbeke Surface roughness and electrical conduction of oxide/polysilicon interfaces J. Electrochem. Soc. 133 1410 1413 1986
3. M. Hendriks C. Mavero Phosphorus doped polysilicon for double poly structures J. Electrochem. Soc. 138 1466 1474 1991
4. H. L. Peek J. F. Verwey The characteristization and technol-ogy of deposited oxides for EEPROM Electrochem. Soc. Meeting Electrochem. Soc. Meeting San Francisco CA 1983-May-8-13
5. R. M. Andersen D. R. Kerr Evidence for surface asperity mechanism of conductivity in oxide grown on polycrystalline silicon J. Appl. Phys. 48 4834 4836 1977
6. H. R. Huff R. D. Halvorson T. L. Chiu D. Guterman Experimental observations on conduction through polysilicon Ox-ide J. Electrochem. Soc. 17 2482 2488 1980