Advanced electrical-level modeling of EEPROM cells

IEEE Transactions on Electron Devices

Volumn 40, Issue 5, 1993, Pages 951-957

  Lanzoni, Massimo ^a   Olive, Piero ^a   Riccò, Bruno ^a   Suñé, Jordi ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; ELECTRON TUNNELING; MOS DEVICES; RANDOM ACCESS STORAGE;

EEPROM CELLS; FLOATING-GATE EEPROM; MOS INJECTOR; SEMICONDUCTOR-OXIDE INTERFACE; TUNNEL CURRENT;

SEMICONDUCTOR STORAGE;

EID: 0027591870     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.210204     Document Type: Article

References (14)

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