ULSI Reliability Through Ultraclean Processing

Proceedings of the IEEE

Volumn 81, Issue 5, 1993, Pages 716-729

  Ohmi, Tadahiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DECONTAMINATION; INTEGRATED CIRCUIT MANUFACTURE; LSI CIRCUITS; METALLIZING; MOS DEVICES; RELIABILITY; SEMICONDUCTING SILICON;

SILICON EPITAXIAL LAYERS; ULSI RELIABILITY; ULTRACLEAN PROCESSING; ULTRACLEAN WAFER SURFACES;

ULSI CIRCUITS;

EID: 0027590609     PISSN: 00189219     EISSN: 15582256     Source Type: Journal    
DOI: 10.1109/5.220903     Document Type: Article

References (106)

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2. T. Shibata and T. Ohmi, “A self-learning neural-network LSI using neuron MOS-FET’s,” in Tech. Dig., 1992 Symp. VLSI Technol, June 1992, pp. 84–85.
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6. T. Yamashita, T. Shibata, and T. Ohmi, “Neuron MOS winner-take-all circuit and its application to associate memory,” presented at 1993 ISSCC, pp. 236–237, Feb. 1993.
7. T. Shibata, K. Kotani, and T. Ohmi, “Real-time reconfigurable logic circuits using neuron MOS transistors,” presented at 1993 ISSCC, 228–239, Feb. 1993.
8. T. Shibata and T. Ohmi, “Neuron MOS voltage-mode circuit technology for multiple-valued logic,” IEICE Trans. Electron., Mar. 1993.
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19. T. Ohmi and M. Yasuda, “Evaluating passive and active mi-crovibration control technologies,” Microcontamination, vol. 7, pp. 23–30, Sept. 1989.
20. T. Ohmi, H. Inaba, and T. Takenami, “Research on adhesion of particles to charged wafers critical in contamination control,” Microcontamination, vol. 7, pp. 29–32, Oct. 1989.
21. T. Ohmi and M. Yasuda, “Preventing electromagnetic interference essential for ULSI.E-beam performance,” Microcontamination, vol. 7, pp. 29–32, Nov. 1989.
22. T. Ohmi and M. Yasuda, “Using water-based cooling systems in cleanroom envi-ronments,” Microcontamination, vol. 7, pp. 27–34, Dec. 1989.
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28. K. Sugiyama and T. Ohmi, “ULSI fab must being with ultra-clean nitrogen system,” Microcontamination, vol. 6, pp. 49–54, Nov. 1988.
29. Y. Kanno and T. Ohmi, “Components key to developing contamination free gas supply,” Microcontamination, vol. 6, pp. 23–30, Dec. 1988.
30. K. Sugiyama, T. Ohmi, T. Okumura, and F. Nakahara, “Elec-tropolished moisture-free piping surface essential for ultrapure gas system,” Microcontamination, vol. 7, pp. 37–65, Jan. 1989.
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32. Y. Mizuguchi, K. Sugiyama, and T. Ohmi, “Welding technology for passivated tubing systems,” in Proc. Microcontamination 89 Conf., Anaheim, CA, Oct. 1989, pp. 57–64.
33. H. Berger, F. Nakahara, T. Ohmi, K. Sugiyama, Y. Mizuguchi, M. Nakamura, H. Mihira, and K. Sato, “High purity gas dilution system and its evaluation by APIMS,” in Proc. Microcontami-nation 89 Anaheim, CA, Oct. 1989, 65–79.
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37. T. Ohmi, M. Nakamura, A. Ohki, K. Kawada, and K. Hirao, “Trace moisture analysis in speciality gases,” J. Electrochem. Soc., vol. 139, 2654–2658, Sept. 1992.
38. K. Yabe, Y. Motomura, H. Ichikawa, T. Mizuniwa, and T. Ohmi, “Responding to the future quality demands of ultrapure water,” Microcontamination, vol. 7, 37–68, Feb. 1989.
39. K. Yabe, T. Kumagai, H. Ichikawa, S. Akiyama, T. Mizuniwa, and T. Ohmi, “Evaluating equipment technologies for future monitoring demands of ultrapure water,” Microcontamination, vol. 7, 25–30, Mar. 1989.
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44. N. Miki, M. Maeno, K. Maruhashi, and T. Ohmi, “Vapor-liquid equilibrium of the binary system HF-H 2 O extending to extremely anhydrous hydrogen fluoride,” J. Electrochem. Soc., vol. 137, pp. 787–790, Mar. 1990.
45. N. Miki, M. Maeno, and T. Ohmi, “Conductivity and dissociation equilibrium of extremely anhydrous hydrogen fluoride,” J. Electrochem. Soc., vol. 137, pp. 790–794, Mar. 1990.
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63. T. Ohmi, H. Iwabuchi, T. Shibata, and T. Ichikawa, “Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process,” Appl. Phys. Lett., vol. 54, pp. 253–255, Jan. 1989.
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65. T. Ohmi, T. Ichikawa, H. Iwabuchi, and T. Shibata, “Formation of device-grade epitaxial silicon films at extremely low temperatures by low energy bias sputtering,” J. Appl. Phys., vol. 66, pp. 4756–4766, Nov. 1989.
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67. T. Ohmi, K. Hashimoto, M. Morita, and T. Shibata, “Study on further reducing the epitaxial silicon temperature down to 250°C in low-energy bias sputtering,” J. Appl. Phys., vol. 69, pp. 2062–2071, Feb. 1991.
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69. T. Ohmi, “Closed system essential for high-quality processing in advanced semiconductor manufacturing lines,” Microcontam-ination, vol. 8. pp. 27–32, 106–107, June 1990.
70. T. Ohmi and T. Shibata, “Developing a fully automated, closed wafer manufacturing system,” Microcontamination, vol. 8, pp. 25–32, 84—85, July 1990.
71. T. Ohmi and T. Shibata, “Requirements of CAM in IC technology,” Microelectron. Eng., vol. 10, pp. 177–196, 1991.
72. H. H. Goto, M. Sasaki, T. Ohmi, T. Shibata, A. Yamagami, N. Okamura, and O. Kamiya, “A low damage, low contaminant plasma processing system utilizing energy clean technol-ogy,” IEEE Trans. Semiconductor Manufacturing, vol. 4, pp. 111–121, May 1991.
73. H. D. Lowe, H. H. Goto, and T. Ohmi, “Control of ion energy and flux in a dual radio frequency excitation magnetron sputtering discharge,” J. Vac. Sci. Technol. A, vol. 9, pp. 3090–3099, Nov./Dec. 1991.
74. H. H. Goto, H. D. Lowe, and T. Ohmi, “Dual excitation reactive ion etcher for low energy plasma processing,” J. Vac. Sci. Technol. A, pp. 3048-3054, Sept./Oct. 1992.
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83. K. Masu, Y. Hiura, K. Tsubouchi, T. Ohmi, and N. Mikoshiba, “In-situ observation of electromigration in Cu film using scanning-reflection high-energy electron diffraction microscope,” Japan. J. Appl. Phys., vol. 30, pp. 3642–3645, Dec. 1991.
84. T. Nitta, T. Ohmi, M. Otsuki, T. Takewaki, and T. Shibata, “Electrical properties of giant-grain copper thin films formed by a low kinetic energy particle process,” J. Electrochem. Soc., vol. 139, pp. 922–927, Mar. 1992.
85. T. Ohmi and K. Tsubouchi, “Advanced copper metallization technology for ULSI interconnects,” Solid State Technol., vol. 35. pp. 47–55, Apr. 1992.
86. M. Kiuchi, K. Fujii, T. Tanaka, M. Sato, and F. Fujimoto, “Mi-crostructure of titanium nitride films produced by the dynamic mixing method,” in Proc. 12th Int. Conf. Atomic Collisions in Solids, Okayama, Japan, 1987, pp. 649–652.
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88. T. Nitta, T. Ohmi, T. Shibata, T. Hoshi, S. Sakai, K. Sakaibara, and S. Imai, “Evaluating the large electromigration resistance of copper interconnects employing a newly-developed accelerated life-test method,” submitted to J. Electrochem. Soc.
89. T. Ohmi, T. Hoshi, T. Yoshie, T. Takewaki, M. Otsuki, T. Shibata, and T. Nitta, “Large-electromigration-resistance copper interconnect technology for sub-half-micron ULSTs, in Tech. Dig., 1991 Int. Electron Devices Meet., Dec. 1991, 285–288.
90. T. Ohmi, H. Kuwabara, S. Saito, and T. Shibata, “Formation of high quality pure aluminum films by low kinetic energy particle bombardment,” J. Electrochem. Soc., vol. 137, pp. 1008–1016, Mar. 1990.
91. H. Kuwabara, M. Otsuki, and T. Ohmi, “Ideal metal/silicon contact formation by clean-nitrogen-seal processing,” in Ext. Abstracts, 179th Electrochem. Soc. Meet., Washington, DC, May 1991, Abstract 311, 463–464.
92. K. Tsubouchi, K. Masu, K. Sasaki, and N. Mikoshiba, “Selec-tive A1 CVD in hydrogen-terminated Si surface,” in Tech. Dig., 1991 Int. Electron Devices Meet., Dec. 1991, 269–272.
93. M. Miyawaki and T. Ohmi, “Reduction of fixed-pattern noise of BASIS due to low kinetic energy reactive ion and native-oxide free processing,” IEEE Trans: Electron Devices, vol. 38, pp. 1037–1043, May 1991.
94. H. Mishima, T. Yasui, T. Mizuniwa, M. Abe, and T. Ohmi, “Particle-free wafer cleaning and drying technology,” IEEE Trans. Semiconductor Manufacturing, vol. 2, pp. 69–75, Aug. 1989.
95. T. Ohmi and S. Aoyama, “Calibration of height in atomic force microscope images with sub-nanometer scale silicon dioxide steps,” Appl. Phys. Lett., pp. 2479–2481, Nov. 16, 1992.
96. W. Kern and D. A. Poutien, “Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology,” RCA Rev., vol. 31, 187–205, June 1970.
97. M. Ishizaka, T. Iikuka, S. Ohi, M. Fukuma, and M. Mikoshiba, “Advanced electron mobility of MOS inversion layers considering 2-D degenerated electron gas physics,” in Tech. Dig. Int. Electron Devices Meet., Dec. 1990, 763–766.
98. T. Ohmi, M. Morita, and T. Hattori, “Defects and impurities in SiO2 interface for oxides prepared using super clean method,” in C. R. Helms and B. E. Deal, Eds., The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. New York: Plenum, 1988, pp. 413—419.
99. T. Ohmi, K. Matsumoto, K. Nakamura, K. Makihara, J. Takano, and K. Yamamoto, “Influence of water surface orientation on very thin oxide quality,” Appl. Phys. Lett., vol. 62, pp. 405–407, Jan. 1993.
100. T. Ohmi, M. Morita, A. Teramoto, K. Makihara, and K. S. Tseng, “Very thin oxide film on a silicon surface by ultraclean oxidation,” Appl. Phys. Lett., vol. 60, pp. 2126–2128, Apr. 1992.
101. A. E. Michel, F. F. Fang, and E. S. Pan, “Annealing properties of ion-implanted p-n junction in silicon,” J. Appl. Phys., vol. 45, pp. 2991–2996, July 1974.
102. K. Tsukamoto, Y. Akasaka, Y. Watari, Y. Kusano, Y. Hirose, and G. Nakamura, “Arsenic-implanted emitter and its application to UHF power transistors,” Japan. J. Appl. Phys., vol. 17, p. 187, 1977.
103. T. Nitta, T. Ohmi, Y. lshihara, A. Okita, T. Shibata, J. Sugiura, and N. Ohwada, “Reverse-bias current reduction in low-temperature-annealed silicon pn junctions by ultraclean ion-implantation technology,” J. Appl. Phys., vol. 67, pp. 7404–7412, June 1990.
104. T. Ohmi, K. Masuda, T. Hashimoto, T. Shibata, M. Kato, and Y. lshihara, “Formation of arsenic-implanted pn junctions using high vacuum ion implanter,” in Ext. Abstracts, 19th Conf. Solid State Devices and Materials, Aug. 1987, pp. 299–302.
105. Y. lshihara, A. Okita, K. Yoshikawa, T. Shibata, and T. Ohmi, “Formation of low reverse current ion-implanted n + p junctions by low-temperature annealing,” Appl. Phys. Lett., vol. 55, pp. 966–968, Sept. 1989.
106. K. Kotani, T. Ohmi, S. Shimonishi, T. Migita, H. Komori, T. Shibata, and T. Nitta, “Low-temperature furnace-annealed aluminum-gate MOSFET for ultra-high-speed integrated circuits,” in Ext. Abstracts, 24th Conf. Solid State Devices and Materials, Aug. 1992, pp. 431–433.