Competing Effects of Well-Barrier Hole Burning and Nonlinear Gain on the Resonance Characteristics of Quantumwell Lasers

IEEE Journal of Quantum Electronics

Volumn 29, Issue 5, 1993, Pages 1319-1329

  Vassell, M O ^a   Sharfin, W F ^a   Rideout, William C ^b   Lee, Johnson ^b  

^a Lasertron   (United States)

^b VERIZON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DAMPING; DYNAMIC RESPONSE; FREQUENCY RESPONSE; RESONANCE; TRANSFER FUNCTIONS;

CONTOUR MAP; FREQUENCY TRANSFER FUNCTION; NONLINEAR GAIN; PHASE PORTRAIT; RESONANCE CHARACTERISTICS; RESONANCE FREQUENCY; TIME RESPONSE; WELL BARRIER HOLE BURNING;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0027590556     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.236144     Document Type: Note

References (22)

1. I. Suemune, L.A. Coldren, M. Yamanishi, and Y. Kan, “Extremely wide modulation bandwidth in a low threshold current strained quantum well laser,” Appl. Phys. Lett., vol. 53, pp. 1378–1380, Oct. 1988.
2. W.F. Sharfin, J. Schlafer, W. Rideout, B. Elman, R.B. Lauer, J. LaCourse, and F.D. Crawford, “Anomalously high damping in strained InGaAs-GaAs single quantum well lasers,” IEEE Photon. Technol. Lett., vol. 3, pp. 193–195, Mar. 1991.
3. W.F. Sharfin, J. Schlafer, W. Rideout, B. Elman, E. Koteles, R.B. Lauer, J. LaCourse, and F.D. Crawford, “A novel mechanism for nonlinear gain in quantum well lasers,” presented at CLEO′91, Baltimore, MD, May 12–17, 1991.
4. M. Asada, M. Yamada, and Y. Suematsu, “Density matrix theory of semiconductor lasers with relaxation broadening,” in Optical Devices and Fibers, Y. Suematsu, Ed. Amsterdam: North Holland, 1985, vol. 17 of JARECT, pp. 58–72.
5. T. Takahashi and Y. Arakawa, “Nonlinear gain effects in quantum well, quantum well wire, and quantum box lasers,” IEEE J. Quantum Electron., vol. 27, pp. 1824–1829, 1991.
6. M.P. Kesler and E.P. Ippen, “Subpicosecond gain dynamics in GaAlAs lasers,” Appl. Phys. Lett., vol. 51, pp. 1765–1767, 1987.
7. M. Willatzen, A. Uskov, J. Mork, H. Olesen, B. Tromborg, and A. Jauho, “Nonlinear gain suppression in semiconductor lasers due to carrier heating,” IEEE Photon. Technol. Lett., vol. 3, pp. 606–609, July 1991.
8. C.B. Su, “Dielectric grating induced by cavity standing wave as a new explanation of origin of nonlinear gain in semiconductor lasers,” Electron. Leu., vol. 24, pp. 370–371, 1988.
9. R. Nagarajan, T. Fukushima, S.W. Corzine, and J.E. Bowers, “Effects of carrier transport on high-speed quantum well lasers,” Appl. Phys. Lett., vol. 59, pp. 1835–1837, Oct. 1991.
10. R. Nagarajan, T. Fukushima, M. Ishikawa, J.E. Bowers, R.S. Geels, and L.A. Coldren, “Transport limits in high-speed quantum-well lasers: Experiment and theory,” IEEE Photon. Technol. Lett., vol. 4, pp. 121–123, Feb. 1992.
11. N. Tessler, R. Nagar, D. Abraham, and G. Eisenstein, “Coupling between barrier and quantum well energy states in a multiple quantum well optical amplifier,” Appl. Phys. Lett., vol. 60, pp. 665–667, Feb. 1992.
12. T.C. Wu, S.C. Kan, D. Vassilovski, K.Y. Lau, C.E. Zah, B. Pathak, and T.P. Lee, “Gain compression in tensile-strained 1.55 ìçé quantum well lasers operating at first and second quantized states,” Appl. Phys. Lett., vol. 60, pp. 1794–1796, April 1992.
13. R. Nagarajan, M. Ishikawa, and J.E. Bowers, “Effects of carrier transport on relative intensity noise and critique of Ê factor predictions of modulation response,” Electron. Lett., vol. 28, pp. 846–848, Apr. 1992.
14. S.C. Kan, D. Vassilovski, T.C. Wu, and K.Y. Lau, “Quantum capture and escape in quantum-well lasers-Implications on direct modulation bandwidth limitations,” IEEE Photon. Technol. Lett., vol. 4, pp. 428–431, May 1992.
15. M.O. Vassell, W.F. Sharfin, W. Rideout, and J. Lee, “Small-signal predictions of the well-barrier hole burning model of quantum-well laser dynamics,” Appl. Phys. Lett., vol. 61, pp. 1145–1147, Sept. 1992.
16. W.F. Sharfin, W. Rideout, E. Koteles, J. Schlafer, B. Elman, I. U. Vassell, and F.D. Crawford, “Effect of carrier transport on modulation bandwidth of quantum well lasers,” presented at 17th Euro. Conf. Opt. Commun. ECOC′91, Paris, France, Sept. 1991.
17. W. Rideout, W.F. Sharfin, E.S. Koteles, M.O. Vassell, and B. Elman, “Well-barrier hole burning in quantum well lasers,” IEEE Photon. Technol. Lett., vol. 3, pp. 784–786, Sept. 1991.
18. S. Morin, B. Deveaud, F. Clerot, K. Fujiwara, and K. Mitsunaga, “Capture of photoexcited carriers in a single quantum well with different confinement structures,” IEEE J. Quantum Electron., vol. 27, pp. 1669–1675, 1991; and references therein.
19. S. Bellone, G. Cocorullo, F.G. Delia Corte, C. L. Harnagel, and G. Schweeger, “Analytical model of GaAs PIN diodes for a wide range of currents and temperatures,” Solid-State Electron., vol. 35, pp. 821–827, 1992.
20. J. Lee, C. Shieh, and M.O. Vassell, “Variation of threshold current with cavity length in strained-layer InGaAs/GaAs quantum well lasers,” J. Appl. Phys., vol. 69, pp. 1882–1891, Feb. 1991.
21. Handbook of Mathematical Functions, M. Abramowitz and I.A. Ste-gun, Ed., Nat. Bur. Stand. Appl. Math. Series, vol. 55, p. 17, 1964.
22. See, for example, G.P. Agrawal and I. E. Dutta, Long-wavelength Semiconductor Lasers. New York: Van Nostrand Reinhold Co., 1986, Sec. 6.5.