Large-Signal Numerical and Analytical HBT Models

IEEE Transactions on Electron Devices

Volumn 40, Issue 5, 1993, Pages 837-845

  Teeter, Douglas A ^a   East, Jack R ^b   Mains, Richard K ^b   Haddad, George I ^b  

^a RAYTHEON COMPANY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; MILLIMETER WAVES; POWER AMPLIFIERS;

BOLTZMANN TRANSPORT EQUATION; DRIFT-DIFFUSION SIMULATION; EBERS-MOLL MODEL; GUMMEL-POON MODEL; HBT MODELS; LARGE-SIGNAL ANALYSIS; MILLIMETER-WAVE POWER AMPLIFIER;

BIPOLAR TRANSISTORS;

EID: 0027590151     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.210188     Document Type: Article

References (18)

1. B. Bayraktaroglu, M. A. Khatibzadeh, and R. D. Hudgens, “5 W monolithic HBT amplifier for broadband X-band applications,” in IEEE Microwave and Millimeter Wave Monolithic Circuits Symp., 1990, pp. 43–46.
2. N. L. Wang, N. H. Sheng, M. F. Chang, W. J. Ho, G. J. Sullivan, E. A. Sovero, J. A. Higgins, and P. M. Asbeck, “Ultrahigh power efficiency operation of common-emitter and common-base HBT's at 10 GHz,” IEEE Trans. Microwave Theory Tech., vol. 38, no. 10, pp. 1381–1390, Oct. 1990.
3. P. A. Sandbom, J. R. East, and G. I. Haddad, “Quasi-two-dimensional modeling of GaAs MESFET's,” IEEE Trans. Electron Devices, vol. ED-34, no. 5, pp. 985–991, May 1987.
4. D. A. Teeter, “Large-signal characterization and modeling of the heterojunction bipolar transistor,” Ph.D. dissertation, The University of Michigan, Ann Arbor, 1992.
5. P. A. Sandbom, A. Rao, and P. A. Blakey, “An assessment of approximate nonstationary charge transport models used for GaAs device modeling,” IEEE Trans. Electron Devices, vol. 36, no. 7, pp. 1244–1253, July 1989.
6. C. C. McAndrew, K. Singhal, and E. L. Heasell, “A consistent non-isothermal extension of the Scharfetter-Gummel stable difference approximation,” IEEE Electron Device Lett., vol. EDL-6, no. 9, pp. 446–447, Sept. 1985.
7. D. L. Scharfetter and H. K. Gummel, “Large-signal analysis of a silicon Read diode oscillator,” IEEE Trans. Electron Devices, vol. ED-16, no. 1, pp. 64–77, Jan. 1969.
8. J. Sutherland and J. Hauser, “A computer analysis of heterojunction and graded composition solar cells,” IEEE Trans. Electron Devices, vol. ED-24, no. 4, pp. 363–372, Apr. 1977.
9. I. Getreu, Modeling The Bipolar Transistor. Beaverton, OR: Tektronix, 1977.
10. M. Hafizi, C. R. Crowell, and M. E. Grupen, “The dc characteristics of GaAs/AlGaAs heterojunction bipolar transistors with application to device modeling,” IEEE Trans. Electron Devices, vol. 37, no. 10, pp. 2121–2129, Oct. 1990.
11. Libra Users Guide, EESOF, 5601 Lindero Canyon Road, Westlake Village, CA 91362.
12. O. Pitzalis, Jr., “Software prototyping: Nonlinear CAE yields accurate design of RF amplifiers,” Application Note 19, EESOF, 5601 Lindero Canyon Road, Westlake Village, CA 91362.
13. D. A. Teeter, J. R. East, R. K. Mains, and G. I. Haddad, “Large-signal characterization and numerical modeling of the GaAs/AlGaAs HBT,” in IEEE MTT-S Dig., 1991, pp. 651–654.
14. D. A. Teeter, J. R. East, and G. I. Haddad, “Error correction and power calibration of active load pull measurement systems,” in Proc. 37th ARFTG Conf., June 1991, pp. 86–93.
15. S. A. Maas, B. L. Nelson, and D. L. Tait, “Intermodulation in heterojunction bipolar transistors,” IEEE Trans. Microwave Theory Tech., vol. 40, no. 3, pp. 442–448, Mar. 1992.
16. P. Grossman and J. Choma, “Large-signal modeling of HBT's including self-heating and transit time effects,” IEEE Trans. Microwave Theory Tech., vol. 40, no. 3, pp. 449–464, Mar. 1992.
17. S. Maas, Nonlinear Microwave Circuits. Norwood, MA: Artech House, 1988, pp. 81–153.
18. max for microwave heterojunction transistors,” IEEE Trans. Electron Devices, vol. 38, no. 8, pp. 1685–1692, Aug. 1991.