Self-aligned aluminum-gate MOSFET's having ultra-shallow junctions formed by 450 °C furnace annealing

IEICE Transactions on Electronics

Volumn E76-C, Issue 4, 1993, Pages 541-547

  Kotani, Koji ^a   Ohmi, Tadahiro ^a   Shimonishi, Satoshi ^a   Migita, Tomohiro ^a   Komori, Hideki ^a   Shibata, Tadashi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; ELECTRIC PROPERTIES; GATES (TRANSISTOR); ION IMPLANTATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SPUTTER DEPOSITION;

450 DEGREES C FURNACE ANNEALING; SELF ALIGNED ALUMINUM GATE MOSFETS; ULTRA SHALLOW JUNCTIONS; ULTRACLEAN ION IMPLANTATION TECHNOLOGY;

MOSFET DEVICES;

EID: 0027585266     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)