Low threshold continuous operation of InGaAs/InGaAsP quantum well lasers at ~2.0 µm

Electronics Letters

Volumn 29, Issue 7, 1993, Pages 574-576

  Forouhar, S ^a   Keo, S ^a   Larsson, A ^b   Ksendzov, A ^a   Temkin, H ^c  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^c Department of Environmental and Radiological Health Sciences   (United States)

Author keywords

Lasers; Semiconductor lasers

Indexed keywords

SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE MEASUREMENT; WAVEGUIDES;

CHEMICAL SENSING; EXTERNAL DIFFERENTIAL QUANTUM EFFICIENCY; LONG RIDGE WAVEGUIDE LASER; QUANTUM WELL LASER; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 0027583350     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19930386     Document Type: Article

References (7)

1. BOUR, D. P., MARTINELLI, R. U., ENSTROM, R. E., STEWART, T. R., DIGIUSEPPE, N. G., HAWRYLO, F. Z., and COOPER, D. B.: 1·5 <γ <1·7 ·m Strained multiquantum well InGaAs/InGaAsP diode lasers’, Electron. Lett., 1991, 28, pp. 37-39
2. FOROUHAR, S., LARSSON, A., KSENDZOV, A., LANG, R. J., TOTHILL, N., and SCOTT, M. D.: ‘Room-temperature operation of MOCVD-grown GalnAs/InP strained-layer multiquantum well lasers in 1·8μm range’. Electron. Lett., 1992, 28, pp. 945-946
3. FOROUHAR, S., KSENDZOV, A., LARSSON, A., and TEMKIN, H.: InOaAs/InGaAsP/InP strained-layer quantum well lasers at ~ 2 μm’. Electron. Lett., 1992, 28, (15), pp. 1431-1432
4. DAVIES, M., DIXON, M., HOUGHTON, D. C., SEDIVY, J. D. Z., and VIGNERON, C. M.: ‘Long-wavelength high-efficiency low-threshold InGaAs/InP MQW lasers with compressive strain’. Electron. Lett., 1992, 28, pp. 2004-2006
5. CHOI, H. K., and EGLASH, S. J.: ‘High efficiency high power GalnAsSb/AlGaAsSb double heterostructure lasers emitting at 2·3 μm’, IEEE J. Quantum Electron., 1991, QE-27, pp. 1555-1559
6. TEMKIN, H., TANBUN-EK, T., LOGAN, R. A., LEWIS, J. A., and DUTTA, N. K.: ‘InGaAs/InP graded index quantum well lasers with nearly ideal static characteristics’, Appl. Phys. Lett., 1990, 56, p. 1222
7. THUS, P. J. A., TIEMEIJER, L. F., KUINDERSMA, P. I., BINSMA, J. J., and DONGEN, T. V.: ‘High performance 1·5 μm wavelength InGaAs strained quantum well lasers and amplifiers’, IEEE J. Quantum Electron., 1991, QE-27, pp. 1426-1439