Low-Power 1/2 Frequency Dividers Using 0.1 -μm CMOS Circuits Built with Ultrathin SIMOX Substrates

IEEE Journal of Solid-State Circuits

Volumn 28, Issue 4, 1993, Pages 510-512

  Fujishima, M ^a   Asada, K ^a   Omura, Y ^b   Izumi, K ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ION IMPLANTATION; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

LOW-POWER FREQUENCY DIVIDERS; SIMOX SUBSTRATES;

FREQUENCY DIVIDING CIRCUITS;

EID: 0027579531     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.210036     Document Type: Article

References (9)

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2. H. Miki et al., “Subfemtojoule deep submicrometer-gate CMOS built in ultra thin Si film on SIMOX substrates,” IEEE Trans. Electron Devices, vol. 38, no. 2, pp. 373–377, Feb. 1991.
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