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Volumn 40, Issue 4, 1993, Pages 685-691

Analysis of Heterojunction Bipolar Transistor/Resonant Tunneling Diode Logic for Low-Power and High-speed Digital Applications

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; LOGIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; TUNNEL DIODES;

EID: 0027578157     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.202778     Document Type: Article
Times cited : (47)

References (15)
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  • 5
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    • T.P.E. Broekaert and C.G. Fonstad, “Extremely high current density, low peak voltage, pseudomorphic In0.53Ga0.47As/AlAs resonant tunneling diode” in IEDM Tech. Dig., 1989, pp. 559–562.
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    • Broekaert, T.P.E.1    Fonstad, C.G.2
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    • Soderstrom, J.R.1    Chow, D.H.2    McGill, T.C.3
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    • Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperature
    • Oct. 17
    • T.P. Broekaert, W. Lee, and C.G. Fonstad, “Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperature,” Appl. Phys. Lett., vol. 53, pp. 1545–1547, Oct. 17, 1988.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.