Electronic structure of GaAs-AlGaAs heterojunctions in parallel magnetic fields

Semiconductor Science and Technology

Volumn 8, Issue 4, 1993, Pages 575-584

  Heisz, J M ^a   Zaremba, E ^a  

^a QUEEN S UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMAGNETIC ENERGY SHIFTS; PARALLEL MAGNETIC FIELDS; SELF-CONSISTENT ELECTRONIC STRUCTURE CALCULATIONS; SUBBAND STATES; TWO-DIMENSIONAL ELECTRON GAS; ZERO-FIELD BEHAVIOR;

ELECTRONIC PROPERTIES; MAGNETIC FIELD EFFECTS; PERTURBATION TECHNIQUES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

HETEROJUNCTIONS;

EID: 0027578038     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/8/4/016     Document Type: Article

References (27)

1. Observation of intersubband scattering in a 2-dimensional electron system
2. Computer Solutions to the Schrödinger Equation