New Approach to the Design and the Fabrication of THz Schottky Barrier Diodes

IEEE Transactions on Microwave Theory and Techniques

Volumn 41, Issue 4, 1993, Pages 549-557

  Jelenski, AndrzeJ ^b   Krozer, Viktor ^a   Hartnagel, Hans L ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^b Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

MICROWAVE DEVICES; MILLIMETER WAVES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS;

GALLIUM ARSENIDE; SCHOTTKY CONTACTS; SUBMILLIMETER MIXING; THZ FREQUENCY RANGE DIODES;

SCHOTTKY BARRIER DIODES;

EID: 0027574984     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.231645     Document Type: Article

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