Effect of deuterium anneal on sio2/si(L00) interface traps and electron spin resonance signals of ultrathin si02 films

Japanese Journal of Applied Physics

Volumn 32, Issue 4 B, 1993, Pages 569-571

  Fukuda, Hisashi ^a,b   Ueno, Tomo ^a,b   Kawarada, Hiroshi ^c   Ohdomari, Iwao ^c  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

^b TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

^c WASEDA UNIVERSITY   (Japan)

Author keywords

Electron spin resonance; Si02 Si interface; Silicon; Thin insulator film

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DEUTERIUM; DISSOCIATION; ELECTRONIC PROPERTIES; INTERFACES (MATERIALS); MOS DEVICES; REACTION KINETICS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

ANNEAL KINETICS; DEUTERIUM ANNEAL; ELECTRON SPIN RESONANCE; INTERFACE TRAP DENSITY; SILICA/SILICON(100) INTERFACES;

SILICA;

EID: 0027573612     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.L569     Document Type: Article

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