Characterisation of a gaas mesfet oscillator at 4.2 k

IEEE Transactions on Applied Superconductivity

Volumn 3, Issue 1, 1993, Pages 2828-2831

  Vollmer, E ^a   Gutmann, P ^a   Niemeyer, J ^a  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

JOSEPHSON JUNCTION DEVICES; MICROWAVE OSCILLATORS; SEMICONDUCTING GALLIUM COMPOUNDS; STANDARDS; STRIP TELECOMMUNICATION LINES;

GALLIUM ARSENIDE; MESFET OSCILLATORS; STRIPLINE OSCILLATORS; X-BAND OSCILLATORS;

MESFET DEVICES;

EID: 0027558478     PISSN: 10518223     EISSN: 15582515     Source Type: Journal    
DOI: 10.1109/77.233493     Document Type: Letter

References (9)

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