10-Gb/s silicon bipolar 8: 1 multiplexer and 1: 8 demultiplexer

IEEE Journal of Solid-State Circuits

Volumn 28, Issue 3, 1993, Pages 339-343

  Stout, Cheryl L ^a   Doernberg, Joey ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MULTIPLEXING EQUIPMENT; OPTICAL COMMUNICATION EQUIPMENT; TIMING CIRCUITS;

DESIGN OPTIMIZATION; HIGH SPEED MULTIPLEXERS; OPTOELECTRONIC INTERFACES; SILICON BIPOLAR CIRCUITS;

BIPOLAR SEMICONDUCTOR DEVICES;

EID: 0027558341     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.210001     Document Type: Article

References (4)

1. W. Huang et al., “A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts,” IEEE Electron Device Lett., vol. 11, pp. 412–414, Sept. 1990.
2. K. Ishida et al., “A 10-GHz 8-b multiplexer demultiplexer chip set for the SONET STS-192 system,” IEEE J. Solid-State Circuits, vol. 26, no. 12, pp. 1936–1943, Dec. 1991.
3. P. Weger et al., “Static 7 GHz frequency divider IC based on a 2 Si µm bipolar technology,” Electron. Lett., vol. 23, no. 5, pp. 191–192, Feb. 1987.
4. S. Golomb, Shift Register Sequences, revised ed. Laguna Hills, CA: Aegean Park, 1982.