The fabrication of a back-gated high electron mobility transistor-a novel approach using MBE regrowth on an in situ ion beam patterned epilayer

Semiconductor Science and Technology

Volumn 8, Issue 3, 1993, Pages 415-422

  Linfield, E H ^a   Jones, G A C ^a   Ritchie, D A ^a   Thompson, J H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATED HIGH ELECTRON MOBILITY TRANSISTOR; ION BEAM PATTERNED EPILAYER; MOLECULAR BEAM EPITAXIAL REGROWTH; SHEET RESISTIVITY;

FABRICATION; GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0027556043     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/8/3/020     Document Type: Article

References (0)