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Volumn 3, Issue 1, 1993, Pages 2881-2884

Optical Data Communication Between Josephson-Junction Circuits and Room-Temperature Electronics

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; ELECTRONIC EQUIPMENT; FIBER OPTICS; LASER DIODES; OPTICAL DATA PROCESSING; PHOTODIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR LASERS;

EID: 0027553480     PISSN: 10518223     EISSN: 15582515     Source Type: Journal    
DOI: 10.1109/77.234002     Document Type: Letter
Times cited : (13)

References (10)
  • 1
    • 0025546453 scopus 로고
    • Josephson semiconductor interface circuits
    • Dec
    • H., Suzuki, T., Imamura, S., Hasuo, Josephson semiconductor interface circuits, Cryogenics, 30, 1005, 1008, Dec 1990
    • (1990) Cryogenics , vol.30 , pp. 1005-1008
    • Suzuki, H.1    Imamura, T.2    Hasuo, S.3
  • 2
    • 0020141450 scopus 로고
    • High Speed Low Crosstalk Chip Holder for Josephson Integrated Circuits, ” IEEE Trans. Instr
    • C.A., Hamilton, High Speed Low Crosstalk Chip Holder for Josephson Integrated Circuits, ” IEEE Trans. Instr, and Measurement, IM-31, 129, 131 1982
    • (1982) and Measurement , vol.IM-31 , pp. 129-131
    • Hamilton, C.A.1
  • 3
    • 0025568685 scopus 로고
    • Semiconductor-superconductor superconductor hybrid electronics
    • Dec
    • T., Van Duzer, Semiconductor-superconductor superconductor hybrid electronics, Cryogenics, 30, 1014, 1023, Dec 1990
    • (1990) Cryogenics , vol.30 , pp. 1014-1023
    • Van Duzer, T.1
  • 4
    • 84949078857 scopus 로고
    • 5.20Hz Monolithic GaAs Optoelectronic Receiver, High-Performance GaAs MESFET’s, ” in
    • Dec. Washington DC
    • B.J., Van Wees, C., Zeghbroeck, 5.20Hz Monolithic GaAs Optoelectronic Receiver, High-Performance GaAs MESFET’s, ” in, Proc. International Electron Devices Meeting, 229, 232, Dec. Washington DC 1987
    • (1987) Proc. International Electron Devices Meeting , pp. 229-232
    • Van Wees, B.J.1    Zeghbroeck, C.2
  • 5
    • 84949077244 scopus 로고
    • Electron
    • Electron, 63, 263, 273 1989
    • (1989) , vol.63 , pp. 263-273
  • 6
    • 0025562254 scopus 로고
    • Low-temperature behavior of short-channel GaAs MESFETs
    • December
    • B.J., Van Wees, Low-temperature behavior of short-channel GaAs MESFETs, Cryogenics, 30, 1084, 1087, December 1990
    • (1990) Cryogenics , vol.30 , pp. 1084-1087
    • Van Wees, B.J.1
  • 7
    • 0024963127 scopus 로고
    • Marclay, D. J. Arent, Ch. Harder, H.P. Meier, W. Walter and D.J. Webb, :Scaling of GaAs/AlGaAs Laser Diodes for Submilliampere Threshold Current, ” Electron
    • Marclay, D. J. Arent, Ch. Harder, H.P. Meier, W. Walter and D.J. Webb, :Scaling of GaAs/AlGaAs Laser Diodes for Submilliampere Threshold Current, ” Electron, Lett, 25, 892, 894 1989
    • (1989) Lett , vol.25 , pp. 892-894
  • 8
    • 0000662378 scopus 로고
    • High Speed Digital Modulation of ultralow Threshold (<1mA) GaAs Single Quantum-Well Lasers without Bias
    • K.Y., Lau, N., Bar-Chaim, P.L., Derry, A., Yariv, High Speed Digital Modulation of ultralow Threshold (<1mA) GaAs Single Quantum-Well Lasers without Bias, Appl. Phys. Lett, 51, 69, 71 1987
    • (1987) Appl. Phys. Lett , vol.51 , pp. 69-71
    • Lau, K.Y.1    Bar-Chaim, N.2    Derry, P.L.3    Yariv, A.4
  • 9
    • 0025453655 scopus 로고
    • High-speed GaAs/AlGaAs optoelectronic devices for computer applications, ” IBM J. Res
    • High-speed GaAs/AlGaAs optoelectronic devices for computer applications, ” IBM J. Res, Develop, 34, 568, 584 1990
    • (1990) Develop , vol.34 , pp. 568-584


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.