메뉴 건너뛰기




Volumn 40, Issue 3, 1993, Pages 591-597

Analysis of the Effects of Scaling on Interconnect Delay in ULSI Circuits

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC INSULATORS; ELECTRIC NETWORK ANALYSIS; SEMICONDUCTOR DEVICE MODELS;

EID: 0027553273     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.199365     Document Type: Article
Times cited : (51)

References (23)
  • 1
    • 0024927513 scopus 로고
    • Copper as the future interconnection material
    • P.L. Pai and C. H. Ting, “Copper as the future interconnection material,” in IEEE V-MIC Conf. Proc., 1989, pp. 258–264.
    • (1989) IEEE V-MIC Conf. Proc. , pp. 258-264
    • Pai, P.L.1    Ting, C.H.2
  • 2
    • 0020114559 scopus 로고
    • Effect of scaling of interconnections on the time delay of VLSI circuits
    • K. C. Saraswat and F. Mohammadi, “Effect of scaling of interconnections on the time delay of VLSI circuits,” IEEE Trans. Electron Devices, vol. ED-29, no. 4, pp. 645–650, 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , Issue.4 , pp. 645-650
    • Saraswat, K.C.1    Mohammadi, F.2
  • 3
    • 0022061669 scopus 로고
    • Optimal interconnection circuits for VLSI
    • H. B. Bakoglu and J. D. Meindl, “Optimal interconnection circuits for VLSI,” IEEE Trans. Electron Devices vol. ED-32, no. 5, pp. 903–909, 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , Issue.5 , pp. 903-909
    • Bakoglu, H.B.1    Meindl, J.D.2
  • 4
    • 0023313357 scopus 로고
    • Interconnection and electromigration scaling theory
    • D. S. Gardner, J. D. Meindl, and K. C. Karaswat, “Interconnection and electromigration scaling theory,” IEEE Trans. Electron Devices, vol. ED-34, no. 3, pp. 633–643, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , Issue.3 , pp. 633-643
    • Gardner, D.S.1    Meindl, J.D.2    Karaswat, K.C.3
  • 5
    • 0019603042 scopus 로고
    • Coupling capacitances for two-dimensional wires
    • R. L. M. Dang and N. Shigyo, “Coupling capacitances for two-dimensional wires,” IEEE Electron Device Lett., vol. EDL-2, no. 8, pp. 196–197, 1981.
    • (1981) IEEE Electron Device Lett. , vol.EDL-2 , Issue.8 , pp. 196-197
    • Dang, R.L.M.1    Shigyo, N.2
  • 8
  • 9
    • 0022593633 scopus 로고
    • Comparison of phys-ical characteristics of five different polyimide-films
    • P. De Geyter, G. Brasseur, and F. Coopmans, “Comparison of physical characteristics of five different polyimide-films,” in IEEE V-MIC Conf. Proc., 1986, pp. 319–328.
    • (1986) IEEE V-MIC Conf. Proc , pp. 319-328
    • De Geyter, P.1    Brasseur, G.2    Coopmans, F.3
  • 10
    • 0023430581 scopus 로고
    • Material and processing technologies of polyimide for advanced electronic devices
    • A. Endo, M. Takada, K. Adachi, H, Takasago, T. Yada, and Y. Onishi, “Material and processing technologies of polyimide for advanced electronic devices,” J. Electrochem. Soc., vol. 134, no. 10, pp. 2522–2527, 1987.
    • (1987) J. Electrochem. Soc. , vol.134 , Issue.10 , pp. 2522-2527
    • Endo, A.1    Takada, M.2    Adachi, K.3    Takasago, H.4    Yada, T.5    Onishi, Y.6
  • 11
    • 0022027647 scopus 로고
    • Moisture diffusion in polyimide films in integrated circuits
    • D. D. Denton, D. R. Day, D. F. Priore, and S. D. Senturia, “Moisture diffusion in polyimide films in integrated circuits,” J. Electronic Mater., vol. 14, no. 2, pp. 119–136, 1985.
    • (1985) J. Electronic Mater. , vol.14 , Issue.2 , pp. 119-136
    • Denton, D.D.1    Day, D.R.2    Priore, D.F.3    Senturia, S.D.4
  • 12
    • 0022062150 scopus 로고
    • Sodium transport in polyimide-SiO2 systems
    • H. J. Neuhaus, D. R. Day, and S. D. Senturia, “Sodium transport in polyimide-Si0 2 systems,” J. Electronic Mater., vol. 14, no. 3, pp. 379–404, 1985.
    • (1985) J. Electronic Mater. , vol.14 , Issue.3 , pp. 379-404
    • Neuhaus, H.J.1    Day, D.R.2    Senturia, S.D.3
  • 13
    • 0024138366 scopus 로고
    • Reliability of polyimide/nitride dielectrics for multilevel metallization systems
    • A. Hefner, R. Isernhagen M. Lentmaier, and E. Waschler, “Reliability of polyimide/nitride dielectrics for multilevel metallization systems,” in IEEE V-MIC Conf. Proc., 1988, pp. 476–483.
    • (1988) IEEE V-MIC Conf. Proc. , pp. 476-483
    • Hefner, A.1    Isernhagen, R.2    Lentmaier, M.3    Waschler, E.4
  • 14
    • 0024878066 scopus 로고
    • Electrical properties of polyimides for interlevel isolation and active device gate isolation
    • A. Dubey and D. L. Lile, “Electrical properties of polyimides for interlevel isolation and active device gate isolation,” in IEEE V-MIC Conf. Proc., 1989, pp. 390–396.
    • (1989) IEEE V-MIC Conf. Proc. , pp. 390-396
    • Dubey, A.1    Lile, D.L.2
  • 16
    • 0002626228 scopus 로고
    • Electromigration in thin films
    • J. M. Poate, K. N. Tu, and J. W.Mayer, Eds.New York: Wiley
    • F. M. d’Heurle and P. S. Ho, “Electromigration in thin films,” in Thin Films—Interdiffusion and Reactions, J. M. Poate, K. N. Tu, and J. W. Mayer, Eds. New York: Wiley, 1978, p. 243.
    • (1978) Thin Films—Interdiffusion and Reactions , pp. 243
    • d’Heurle, F.M.1    Ho, P.S.2
  • 17
    • 51249188294 scopus 로고
    • The effect of copper additions on electromigration in aluminum thin films
    • F. M. d’Heurle, “The effect of copper additions on electromigration in aluminum thin films,” Met. Trans., vol. 2, pp. 683–689, 1971.
    • (1971) Met. Trans. , vol.2 , pp. 683-689
    • d’Heurle, F.M.1
  • 20
    • 0020091284 scopus 로고
    • Simple estimate of electromigration failure in metallic thin films
    • A. Mogro-Campero, “Simple estimate of electromigration failure in metallic thin films,” J. Appl. Phys., vol. 53, pp. 1224–1225, 1982.
    • (1982) J. Appl. Phys. , vol.53 , pp. 1224-1225
    • Mogro-Campero, A.1
  • 21
    • 84942392077 scopus 로고
    • Activation energies for the different electromigration mechanisms in aluminum
    • H.U. Schreiber, “Activation energies for the different electromigration mechanisms in aluminum,” Electron., vol. 23, pp. 481–485, 1980.
    • (1980) Electron. , vol.23 , pp. 481-485
    • Schreiber, H.U.1
  • 23
    • 0020797359 scopus 로고
    • Approximation of wiring delay in MOSFET LSI
    • T. Sakurai, “Approximation of wiring delay in MOSFET LSI,” IEEE J. Solid-State Circuits, vol. SC-18, pp. 418–426, 1983.
    • (1983) IEEE J. Solid-State Circuits , vol.SC-18 , pp. 418-426
    • Sakurai, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.