SCOPUS 정보 검색 플랫폼

Solid State Electronics

Volumn 36, Issue 3, 1993, Pages 475-479

The effect of hot-electron injection on the properties of flicker noise in n-channel MOSFETs

(2) Cheng, Ching Ho a Surya, Charles a

a NORTHEASTERN UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRONS; ION IMPLANTATION; PHOSPHORUS; SEMICONDUCTOR DEVICE MANUFACTURE; SPURIOUS SIGNAL NOISE;

DEEP DRAIN JUNCTIONS; DOUBLE-DIFFUSED DRAIN TRANSISTORS; FLICKER NOISE; HOT-ELECTRON INJECTION; LIGHTLY-DOPED DRAIN MOSFETS; N-CHANNEL MOSFETS; PHOSPHORUS IMPLANTATION;

MOSFET DEVICES;

EID: 0027553264 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(93)90103-W Document Type: Review

Times cited : (26)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.