A new metal-organic chemical vapor deposition process for selective copper metallization

Materials Science and Engineering B

Volumn 17, Issue 1-3, 1993, Pages 87-92

  Norman, J A T ^a   Muratore, B A ^a   Dyer, P N ^a   Roberts, D A ^a   Hochberg, A K ^a   Dubois, L H ^b  

^a Schumacher   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST SELECTIVITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GRAIN SIZE AND SHAPE; METALLIZING; MICROELECTRONICS; MOLECULAR STRUCTURE; ORGANOMETALLICS; SEMICONDUCTOR DEVICES; SURFACE PROPERTIES;

PRECURSORS; SELECTIVE COPPER METALLIZATION; SINGLE WAFER PROCESSING;

COPPER;

EID: 0027542486     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(93)90085-2     Document Type: Article

References (19)

1. Selective electroless copper for VLSI interconnection
2. Selective low-temperature chemical vapor deposition of copper from (hexafluoroacetylacetonato)copper(I)trimethylphosphine, (hfa)CuP(Me)3
3. Cationic olefin complexes of copper(I). Structure and bonding in Group Ib metal-olefin complexes