Comparison of the switching behavior of IGBT and MCT power devices

Volumn , Issue , 1993, Pages 54-59

  Dettmer, H ^a   Krumbein, U ^a   Lendenmann, H ^a   Muller, S ^a   Fichtner, W ^a   Bauer, F ^a   Lilja, K ^a   Stockmeier, T ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE SIMULATION; DYNAMIC AVALANCHE PHENOMENA; INSULATED GATE BIPOLAR TRANSISTORS; MOS CONTROLLED THYRISTORS; POWER DEVICES; SNUBBERLESS SWITCHING; SWITCHING BEHAVIOUR;

BIPOLAR TRANSISTORS; CHARGE CARRIERS; ELECTRIC FIELD MEASUREMENT; ELECTRIC NETWORK ANALYZERS; GATES (TRANSISTOR); MOS DEVICES; PERFORMANCE; SEMICONDUCTOR DEVICE MODELS; THYRISTORS;

SEMICONDUCTOR SWITCHES;

EID: 0027309716     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)