Nonlinearity of p-i-n Photodetectors

IEEE Photonics Technology Letters

Volumn 5, Issue 1, 1993, Pages 70-72

  Hayes, Robert R ^a   Persechini, David L ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PERTURBATION TECHNIQUES; PHOTODETECTORS;

LINK PERFORMANCE; NONLINEAR EFFECTS;

PHOTODIODES;

EID: 0027303536     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.185064     Document Type: Article

References (4)

1. M. Dentan and B. de Cremoux, “Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination,” J. Lightwave Technol., vol. 8, pp. 1137–1144, 1990.
2. Y. Liu, S. R. Forest, G. L. Tangonan, R. A. Jullens, R. Y. Loo, V. L. Jones, D. L. Persechini, J. L. Pikulski, and M. M. Johnson, “Very-high-bandwidth In0.53Ga0.47As p-i-n detector arrays,” IEEE Photon. Technol. Lett., vol. 3, pp. 931–933, 1991.
3. K. J. Williams and R. D. Esman, “Observations of photodetector nonlinearities,” Electron. Lett., vol. 28, pp. 731–732, 1992.
4. T. H. Windhorn, L. W. Cook, and G. E. Stillman, “Temperature dependent electron velocity-field characteristics for In0.53Ga0.47 As at high electric fields,” J. Electronic Mat., vol. 11, pp. 1065–1082, 1982.