In-situ characterization of si surface oxidation by high-sensitivity infrared reflection spectroscopic method

Japanese Journal of Applied Physics

Volumn 32, Issue 1 S, 1993, Pages 286-289

  Nishida, Masahiro ^a   Matsui, Yuichi ^a   Okuyama, Masanori ^a   Hamakawa, Yoshihiro ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

02 treatment; F2 treatment; Infrared absorption; Infrared reflection; Layer by layer oxidation; VUV light

Indexed keywords

CHARACTERIZATION; ETCHING; HYDROFLUORIC ACID; IN SITU PROCESSING; INFRARED SPECTROSCOPY; OXIDATION; SURFACE TREATMENT; ULTRAVIOLET RADIATION; VACUUM APPLICATIONS;

BUFFERED HYDROFLUORIC ACID (BHF); HIGH SENSITIVITY INFRARED REFLECTION SPECTROSCOPY; INFRARED ABSORPTION; LAYER BY LAYER OXIDATION; SILICON SURFACE OXIDATION; VACUUM ULTRAVIOLET (VUV) LIGHT IRRADIATION;

SEMICONDUCTING SILICON;

EID: 0027303520     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.286     Document Type: Article

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