A review of modern power semiconductor devices

Microelectronics Journal

Volumn 24, Issue 1-2, 1993, Pages 41-54

  Hudgins, J L ^a  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC SWITCHES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; THYRISTORS;

DEPLETION-MODE TRANSISTORS; DISCRETE SEMICONDUCTOR DEVICES; GALLIUM ARSENIDE; GTO'S; HV INTRINSIC SWITCHES; MOS-CONTROLLED THYRISTORS; POWER SEMICONDUCTOR DEVICES; SCHOTTKY RECTIFIERS;

SEMICONDUCTOR DEVICES;

EID: 0027289861     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2692(93)90100-S     Document Type: Article

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8. Analysis of junction barrier controlled Schottky rectifier characteristics
9. The pinch rectifier: a low forward drop, high speed power diode
10. New power rectifier concepts
11. The COMFET — a new high conductance MOS-gated device
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16. An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor
17. An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT)
18. Fast-switching insulated gate transistors
19. Comparison of MOS-gated bipolar transistor structures
20. Analysis of the vertical insulated base transistor
21. Field effect transistor versus analog transistor static induction transistor
22. High-voltage bipolar mode JFET with normally off characteristics
23. Comparative analysis of power bipolar devices
24. Power bipolar-mode JFET (BMFET) versus BJT: a comparative analysis
25. Trade-off between blocking voltage and current ratings in normally-off power BMFETs with diffused gates
26. Temperature variation effects on the switching characteristics of MOS-gate devices
27. Evolution of MOS-bipolar power semiconductor technology
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30. Characterization of 3000 volt MOS controlled thyristor
31. Progress towards an MCT-based 100+ kW high-frequency inverter
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33. Analysis of n-channel MOS-controlled thyristor
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36. 2
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60. The electrical properties and device applications of homoepitaxial and polycrystalline diamond films
61. Diamond transistor performance and fabrication
62. Theory and technology of pin-diodes on GaAs
63. A new fabrication technique of GaAs power devices using liquid phase epitaxy
64. GaAs devices for low loss power rectification
65. GaAs-based opto-thyristor for pulsed power applications
66. Power losses in silicon and silicon carbide diodes
67. Electron-beam-controlled high-power semiconductor switches
68. Photoconductive semiconductor switch (PCSS) recovery
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70. An optically controlled closing and opening semiconductor switch
71. Photoconductive switching in diamond under high bias field
72. Optical control of semiconductor closing and opening switches