Deep centres for optical processing in CdTe

Materials Science and Engineering B

Volumn 16, Issue 1-3, 1993, Pages 262-267

  Rzepka, E ^a   Marfaing, Y ^a   Cuniot, M ^a   Triboulet, R ^a  

^a Laboratoire de Physique des Solides et de Cristallogen?se (LPSC)   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; IMPURITIES; OPTICAL PROPERTIES; SEMICONDUCTING TELLURIUM COMPOUNDS;

CADMIUM TELLURIDE; DEEP CENTERS; OPTICAL PROCESSING;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0027286927     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(93)90057-T     Document Type: Article

References (36)

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3. Cadmium telluride
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6. About the origin of the 0.15 to 0.20 eV defect level in cadmium telluride
7. Deep level structure and compensation mechanism in In-doped CdTe crystals
8. Absorption spectra of Ti(d2), V(d3), and Cr(d4) ions in CdTe
9. Paramagnetic Resonance of Chromium in CdTe
10. EPR Measurements of Chromium Impurity Photoionization Transitions in CdTe
11. Deep donor levels due to isolated Fe in CdTe
12. Photo-EPR and DLTS of CdTe: CO
13. Absorption Spectra of Transition Ions in CdS Crystals