An STM study of molecular-beam epitaxy growth of GaAs

Surface Science

Volumn 280, Issue 3, 1993, Pages 247-257

  Sudijono, J ^a   Johnson, M D ^a   Elowitz, M B ^a   Snyder, C W ^a   Orr, B G ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; IMAGING TECHNIQUES; INTERMETALLICS; MICROSCOPIC EXAMINATION; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE PHENOMENA;

SCANNING TUNNELING MICROSCOPY;

MOLECULAR BEAM EPITAXY;

EID: 0027271546     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(93)90678-D     Document Type: Article

References (13)

1. A combined molecular-beam epitaxy and scanning tunneling microscopy system