Electronic properties of InP grown and annealed under controlled phosphorus atmosphere

1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1993, Pages 313-316

  Hirt, G ^a   Bornhorst, S ^a   Friedrich, J ^a   Schafer, N ^a   Muller, G ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; HALL EFFECT; SEMICONDUCTING INDIUM COMPOUNDS;

CAPACITANCE METHOD; DEEP LEVELS; SHALLOW DONORS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0027271029     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)