Investigation of static and dynamic characteristics of SOI-LDMOSFETs passivated with semi-insulating layers

Volumn , Issue , 1993, Pages 130-134

  Held, R ^a   Serafin, J ^a   Fullmann, M ^a   Constapel, R ^a   Korec, J ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEGRADATION; INSULATING MATERIALS; OXIDES; PASSIVATION; SILICON NITRIDE; SILICON ON INSULATOR TECHNOLOGY; SWITCHING; VOLTAGE MEASUREMENT;

BREAKDOWN VOLTAGE; CHEMICAL VAPOR DEPOSITION OXIDE; SEMI-INSULATING LAYERS; SEMI-INSULATING POLYCRYSTALLINE SILICON; SEMI-RESISTIVE LAYER; SOI-LDMOSFET; TEST DEVICES;

MOSFET DEVICES;

EID: 0027268892     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)